The technology of atomic layer deposition has been used to improve the lifetime of the microchannel plate-photomultiplier tube (MCP-PMT) effectively and makes MCP possible to choose to coat different potential emissive materials on the internal surface of the MCP channels in the future. However, it is still an open question to what extent the secondary electron emission (SEE) yield properties of the emissive materials influence the behavior of the ALD-coated MCP. In this work, the dependences of the gain and timing performance on the SEE yield properties were assessed by using the Monte Carlo and particle-in-cell methods. We established the three-dimensional MCP single channel model in Computer Simulation Technology (CST) Particle Studio. Three important secondary electron emissions, the backscattered, rediffused and true SEEs, were discussed numerically based on the probabilistic model. The secondary electron cascade processes in the MCP single channel were simulated. The simulation results indicate that the opportunities for improving the gain of the ALD-coated MCP by improving the SEE yields corresponding to the incident energies of 0 eV–100 eV. The backscattered and rediffused electrons are found to have strong effects on the gain and timing performance of the MCP. Although the higher the SEE yield the higher the MCP gain, the drawback is the extremely high SEE yield will make the MCP saturated prematurely and degrade the time resolution. The simulation results will be used to guide the design and selection of emissive material for ALD-coated MCP development.

原子层沉积技术已被用于有效地改善微通道板式光电倍增管（MCP-PMT）的寿命，并使MCP将来有可能选择在MCP通道的内表面涂覆不同的潜在发光材料。但是，在何种程度上，发光材料的二次电子发射（SEE）屈服特性会影响ALD涂层MCP的性能。在这项工作中，通过使用蒙特卡洛法和细胞内颗粒法评估了增益和时序性能对SEE产量特性的依赖性。我们在计算机仿真技术（CST）Particle Studio中建立了三维MCP单通道模型。在概率模型的基础上，对三个重要的二次电子发射，即背散射，再扩散和真实SEEs进行了数值讨论。模拟了MCP单通道中的二次电子级联过程。仿真结果表明，通过提高与0 eV–100 eV入射能量相对应的SEE收率，可以改善ALD涂层MCP的增益。发现反向散射和再扩散的电子对MCP的增益和定时性能有很强的影响。尽管SEE产率越高，MCP增益越高，但缺点是SEE产率极高，会使MCP过早饱和并降低时间分辨率。仿真结果将用于指导ALD涂层MCP开发的发射材料的设计和选择。仿真结果表明，通过提高与0 eV–100 eV入射能量相对应的SEE收率，可以改善ALD涂层MCP的增益。发现反向散射和再扩散的电子对MCP的增益和定时性能有很强的影响。尽管SEE产率越高，MCP增益越高，但缺点是SEE产率极高，会使MCP过早饱和并降低时间分辨率。仿真结果将用于指导ALD涂层MCP开发的发射材料的设计和选择。仿真结果表明，通过提高与0 eV–100 eV入射能量相对应的SEE收率，可以改善ALD涂层MCP的增益。发现反向散射和再扩散的电子对MCP的增益和定时性能有很强的影响。尽管SEE产率越高，MCP增益越高，但缺点是SEE产率极高，会使MCP过早饱和并降低时间分辨率。仿真结果将用于指导ALD涂层MCP开发的发射材料的设计和选择。尽管SEE产率越高，MCP增益越高，但缺点是SEE产率极高，会使MCP过早饱和并降低时间分辨率。仿真结果将用于指导ALD涂层MCP开发的发射材料的设计和选择。尽管SEE产率越高，MCP增益越高，但缺点是SEE产率极高，会使MCP过早饱和并降低时间分辨率。仿真结果将用于指导ALD涂层MCP开发的发射材料的设计和选择。