Micropyramid vertical GaN-based ultraviolet (UV) light-emitting diodes (LEDs) on Si(111) substrate have been fabricated by selective area growth to reduce threading dislocations and the polarization effects. There is no-light emission at the bottom and six planes of the pyramid at lower current due to the leakage current and nonradiative recombination of the dislocation at the bottom and the 90° threading dislocations (TDs) at six planes of the pyramid, and the top of the pyramid is the high-brightness region. The micropyramid UV LED has a high optical output intensity under a small current injection, and the series resistance of unit area is only a quarter of the conventional vertical LEDs, so the micropyramid UV LED would have a high output power under the drive circuit. The reverse leakage current of a single micropyramid UV LED is 2 nA at −10 V.

中文翻译：

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Si（111）上的微型金字塔垂直紫外GaN / AlGaN多量子阱LED

Si（111）衬底上的微型金字塔垂直GaN基紫外（UV）发光二极管（LED）已通过选择性区域生长来制造，以减少穿线位错和偏振效应。由于泄漏电流以及底部的位错和金字塔的六个平面上的90°螺纹位错（TD）的无辐射复合，在较低的电流下，金字塔的底部和六个平面上没有光发射，并且金字塔的顶部是高亮度区域。微型金字塔型UV LED在小电流注入下具有较高的光输出强度，单位面积的串联电阻仅为传统垂直LED的四分之一，因此微型金字塔型UV LED在驱动电路下将具有很高的输出功率。