The sensitive detection of polarization-states of ultraviolet (UV) light is enssential for many optoelectronic applications, such as UV communication and polarization imaging. However, the anisotropic response of the polarization detectors based on pristine wide-bandgap materials are quite weak, hindering UV polarization detectors from further application. In this paper, we present highly polarization-sensitive photodetectors based on Ga₂O₃ (UVC) and ZnO (UVA) materials by integrating with sub-wavelength metal nanowires. The photoresponse of pristine ZnO photodetectors to polarized UVA light turns from isotropic to centrosymmetric after introducing 70 nm width/space metal grids. For Ga₂O₃ UVC photodetectors, the polarization rejection ratio was increased from 7.5 to 49 after integrated with 50 nm width/space metal grids. The enhancement of photoresponse to polarized UV light by using sub-wavelength metal grids is studied via FDTD simulation. This work provides an effective way for wide-bandgap semiconductors to improve their sensitivity to UV polarized light, and could be used in UV polarization detection, imaging and communication.

紫外线（UV）偏振态的灵敏检测对于许多光电应用（例如UV通信和偏振成像）至关重要。然而，基于原始宽带隙材料的偏振检测器的各向异性响应非常弱，阻碍了紫外偏振检测器的进一步应用。在本文中，我们通过与亚波长金属纳米线集成，展示了基于Ga ₂ O ₃（UVC）和ZnO（UVA）材料的高度偏振敏感光电探测器。引入70 nm宽度/空间金属栅后，原始ZnO光电探测器对偏振UVA光的光响应从各向同性变为中心对称。对于Ga ₂ O ₃在与50 nm宽度/空间金属栅格集成后，UVC光电探测器的偏振抑制比从7.5增加到49。通过FDTD模拟研究了通过使用亚波长金属格栅增强对偏振UV光的光响应。这项工作为宽带隙半导体提供了一种提高其对UV偏振光灵敏度的有效方法，并且可以用于UV偏振检测，成像和通信。