Metal–semiconductor-metal (MSM) infrared photodetector-based Ag/CuO NW/Ag was fabricated using glancing angle deposition technique integrated RF sputtering machine. The transmission electron microscope confirmed the average length and diameter of the fabricated CuO NW were ~ 450 nm ± 7 nm and 135 nm ± 5 nm, respectively. Moreover, selective area electron diffraction pattern showed that the growth NW was polycrystalline in nature with d-spacing of 0.21 nm and 0.33 nm. The indirect band gap of CuO NW sample was found to be 1.4 eV. Moreover, Ag/CuO/Ag MSM device exhibited photoresponsivity of 2.9 A/W at −4 V applied bias upon exposure of 855 nm monochromatic light source (low density of power 27.29 nW). In addition, the switching responses were also measured, and the rise and fall time were found to be 0.326 s and 0.245 s, respectively.

金属-半导体-金属（MSM）红外光探测器基于Ag / CuO NW / Ag，是使用掠角沉积技术集成的RF溅射机制造的。透射电子显微镜证实所制备的CuO NW的平均长度和直径分别为〜450nm±7nm和135nm±5nm。此外，选择性区域电子衍射图表明，生长的NW本质上是多晶的，d-间距为0.21nm和0.33nm。发现CuO NW样品的间接带隙为1.4 eV。此外，Ag / CuO / Ag MSM器件在855 nm单色光源曝光（低功率密度27.29 nW）时，在施加-4 V偏压时表现出2.9 A / W的光响应性。另外，还测量了开关响应，发现上升和下降时间分别为0.326 s和0.245 s。