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L- and X-Band Dual-Frequency Synthesizer Utilizing Lithium Niobate RF-MEMS and Open-Loop Frequency Dividers
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control ( IF 3.6 ) Pub Date : 2021-01-04 , DOI: 10.1109/tuffc.2020.3048929
Ali Kourani , Yansong Yang , Songbin Gong

This article presents an 8.6-GHz oscillator utilizing the third-order antisymmetric overtone ( ${A}_{{3}}$ ) in a lithium niobate (LiNbO 3 ) radio frequency microelectromechanical systems (RF-MEMS) resonator. The oscillator consists of an acoustic resonator in a closed loop with cascaded RF tuned amplifiers (TAs) built on Taiwan Semiconductor Manufacturing Company (TSMC) RF general purpose (GP) 65-nm complementary metal-oxide semiconductor (CMOS). The TAs bandpass response, set by on-chip inductors, satisfies Barkhausen’s oscillation conditions for ${A}_{{3}}$ while suppressing the fundamental and higher order resonances. Two circuit variations are implemented. The first is an 8.6-GHz standalone oscillator with a source-follower buffer for direct 50- $\Omega $ -based measurements. The second is an oscillator-divider chain using an on-chip three-stage divide-by-two frequency divider for a ~1.1-GHz output. The standalone oscillator achieves a measured phase noise of −56, −113, and −135 dBc/Hz at 1 kHz, 100 kHz, and 1 MHz offsets from an 8.6-GHz output while consuming 10.2 mW of dc power. The oscillator also attains a figure-of-merit of 201.6 dB at 100-kHz offset, surpassing the state-of-the-art (SoA) oscillators-based electromagnetic (EM) and RF-MEMS. The oscillator-divider chain produces a phase noise of −69.4 and −147 dBc/Hz at 1 kHz and 1 MHz offsets from a 1075-MHz output while consuming 12 mW of dc power. Its phase noise performance also surpasses the SoA ${L}$ -band phase-locked loops (PLLs). With further optimization, this work can enable low-power multistandard wireless transceivers featuring high speed, high sensitivity, and high selectivity in small-form factors.
更新日期:2021-01-04
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