AgSnO ₂ , as the most potential material to replace AgCdO, is widely used in low-voltage electrical appliances. However, because of the high hardness and poor conductivity of SnO ₂ , AgSnO ₂ has the problems of processing difficulties and large contact resistance. Based on the first principles of density functional theory, a method is proposed to calculate the electronic structure and mechanical properties of SnO ₂ , SnO ₂ –Ce, SnO ₂ –N, and SnO ₂ –Ce–N. By analyzing the energy band, density of states, and elastic constants, the results show that Ce–N co-doped SnO ₂ has the highest relative conductivity, reduced hardness, and increased ductility and overcome processing difficulty. The doped AgSnO ₂ contact material was prepared by sol–gel method and powder metallurgy method, and the hardness and electrical properties of the sample were tested. The experimental results show that AgSnO ₂ –Ce–N contacts have higher conductivity, lower contact resistance and arc energy, and lower hardness. The theory is consistent with the experiment, proving the feasibility of simulation. Therefore, Ce and N co-doping can effectively overcome the disadvantages of AgSnO ₂ contact materials, improve conductivity, and overcome processing difficulty. It provides a new idea and theoretical basis for the doping research of AgSnO ₂ contact materials.

中文翻译：

---

Ce和N共掺杂对AgSnO 2触头材料性能的影响

AgSnO ₂ 是代替AgCdO的最有潜力的材料，已广泛用于低压电器中。然而，由于SnO _2的硬度高且导电性差 ，因此AgSnO ₂具有加工困难和接触电阻大的问题。基于密度泛函理论的第一原理，提出了一种计算SnO ₂ ，SnO ₂ -Ce，SnO ₂ -N和SnO ₂ -Ce-N的电子结构和力学性能的方法 。通过分析能带，态密度和弹性常数，结果表明Ce–N共掺杂SnO ₂具有最高的相对电导率，降低的硬度，增加的延展性并克服了加工难度。通过溶胶-凝胶法和粉末冶金法制备了掺杂的AgSnO ₂接触材料，并测试了样品的硬度和电性能。实验结果表明，AgSnO ₂ -Ce-N触头具有较高的电导率，较低的接触电阻和电弧能以及较低的硬度。理论与实验吻合，证明了仿真的可行性。因此，Ce和N共掺杂可以有效克服AgSnO ₂接触材料的缺点 ，提高导电性，克服工艺困难。为AgSnO ₂的掺杂研究提供了新的思路和理论依据。 接触材料。