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A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Psat and 26.5% PAE in 16-nm FinFET CMOS
IEEE Journal of Solid-State Circuits ( IF 5.4 ) Pub Date : 2021-03-17 , DOI: 10.1109/jssc.2021.3063032
Kun-Da Chu , Steven Callender , Yanjie Wang , Jacques Christophe Rudell , Stefano Pellerano , Christopher Hull

This article presents the design of a dual-mode V-band power amplifier (PA) that enhances the efficiency at power back-off (PBO) using load modulation. The PA utilizes a reconfigurable two-/four-way power combiner to enable two discrete modes of operation–full power and back-off power. The power combiner employs two techniques to further improve the PA efficiency at PBO: 1) usage of transformers with non-uniform turns ratios to reduce the difference in impedance presented to the PA cores between the two modes and 2) utilize a proposed switching scheme to eliminate the leakage inductance associated with the disabled path in back-off power mode (BPM). The two-stage PA achieves a peak gain of 21.4 dB with a fractional BW (fBW) of 22.6% (51–64 GHz). At 65 GHz, the PA has a P sat of +17.9 dBm with an OP 1 dB of +13.5 dBm and a peak power added efficiency (PAE) of 26.5% in full-power mode. In BPM, the measured P sat , OP 1 dB , and peak PAE are +13.8 dBm, +9.6 dBm, and 18.4%, respectively. The PAE is enhanced by 6% points at a 4.5-dB back-off. The PA is capable of amplifying a 6 Gb/s 16-QAM modulated signal with an EVM rms of −20.7 dB at an average P out /PAE of +13 dBm/13.6%, respectively. This PA was implemented in 16-nm FinFET, occupies a core area of 0.107 mm 2 , and operates under a 0.95-V supply.

中文翻译:

16nm FinFET CMOS中具有+17.9 dBm P sat和26.5%PAE的可重配置非均匀功率组合V波段PA

本文介绍了一种双模V波段功率放大器(PA)的设计,该放大器使用负载调制来提高功率回退(PBO)时的效率。该功率放大器利用可重配置的两路/四路功率组合器来启用两种离散的工作模式-全功率和后退功率。功率组合器采用两种技术来进一步提高PBO处的PA效率:1)使用不均匀匝数比的变压器,以减小两种模式之间呈现给PA磁芯的阻抗差异,以及2)利用提议的开关方案消除与后退功率模式(BPM)中的禁用路径相关的漏感。两级功率放大器的峰值增益为21.4 dB,而分数带宽(fBW)为22.6%(51–64 GHz)。在65 GHz时,PA具有+17.9 dBm的P sat和OP 在全功率模式下,1 dB +13.5 dBm,峰值功率附加效率(PAE)为26.5%。在BPM中,测得的P sat ,OP 1 dB 和峰值PAE分别为+13.8 dBm,+ 9.6 dBm和18.4%。在4.5dB的补偿下,PAE提高了6%。该PA能够 分别以+13 dBm / 13.6%的平均P out / PAE放大具有-200.7 dB的EVM均方根值的 6 Gb / s 16-QAM调制信号 。该功率放大器在16纳米FinFET中实现,占据了0.107 mm 2的核心面积 ,并在0.95V的电源下工作。
更新日期:2021-04-27
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