A proposed RFCMOS reliability subcircuit model to evaluate the transceiver frontend circuits for 5G new radio (NR) networks sub-6-GHz application is presented. When studied 1-year operational performance considering hot-carrier stress in circuit level, the common-source LNA circuit is robust in gain and noise figure than common-gate common-source LNA circuit, and Class-A power amplifier loses gain 52%. However, in transceiver system level, the receiver-used two-stage common-gate common-source LNA shows robust than used common-source LNA. The transmitter's gain and output power exhibit a strong relationship with performance of Class-A power amplifier after hot-carrier stress. When the receiver using the overdriven bias 3.1 V 1 year predicted by proposed model, the EIS is −89.7 dBm, which still meet 5G FR1 standard though the gain degraded to 17 dB; transmitter overdriven at bias 3.3 V, the least output power is 19.1 dBm, which still meet 5G FR1 standard, though the IIP3 worsen to 13%.

中文翻译：

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基于可靠性模型的第五代新型无线电通信sub-6GHz频段RFCMOS收发器前端电路可靠性评估与再设计方法

提出了一种建议的 RFCMOS 可靠性子电路模型，用于评估 5G 新无线电 (NR) 网络 6 GHz 以下应用的收发器前端电路。在研究考虑电路级热载流子应力的 1 年运行性能时，共源 LNA 电路在增益和噪声系数方面比共栅共源 LNA 电路稳健，A 类功率放大器增益损失 52%。然而，在收发器系统级别，接收器使用的两级共栅极共源 LNA 表现出比使用的共源 LNA 稳健。发射机的增益和输出功率与 A 类功率放大器在热载波应力后的性能表现出很强的关系。当接收器使用建议模型预测的过驱动偏置 3.1 V 1 年时，EIS 为 −89.7 dBm，虽然增益降低到 17 dB，但仍符合 5G FR1 标准；发射器在偏置 3.3 V 过驱动，最小输出功率为 19.1 dBm，仍然满足 5G FR1 标准，尽管 IIP3 恶化到 13%。