In this paper, the impact of ferroelectric layer thickness (t_FE) on input drain current characteristic is reported in ferroelectric tunnel junction (FTJ) TFET through TCAD simulator. In consecutive step, the RF/analog parameters such as transconductance (g_m), output conductance (g_d), gain (g_m/g_d), gate capacitance (C_gg), cut off frequency (f_t), transconductance generation factor (TGF ​= ​g_m/I_D), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) are highlighted as a function of t_FE in FTJ TFET. Finally, the effect of t_FE on linearity characteristic like harmonics of g_m (g_m2 and g_m3), voltage intercept points (VIP₂ and VIP₃), power intercept point (IIP₃), and 1-dB compression point are presented in FTJ-TFET. Results revealed that the scaling of t_FE has noticeable influence on RF/analog and linearity performance in FTJ-TFET. The reduction in t_FE improves the RF/analog performance, whereas, suppressed the linearity characteristic. Moreover, a comparative study of FTJ-TFET with ferroelectric TFET (F-TFET) and conventional TFET in terms of transfer characteristic, BTBT rate, eDensity, and electric field are highlighted through numerical simulator.

在本文中，通过TCAD仿真器报告了铁电隧道结（FTJ）TFET中铁电层厚度（t _FE）对输入漏极电流特性的影响。在后续步骤中，RF /模拟参数，例如跨导（g _m），输出电导（g _d），增益（g _m / g _d），栅极电容（C _gg），截止频率（f _t），跨导生成因子（TGF = g _m / I _D），跨导频率乘积（TFP），增益频率乘积（GFP）和增益跨导频率乘积（GTFP）作为t _FE的函数突出显示在FTJ TFET中。最后，介绍了t _FE对线性特性的影响，如g _m（g _m2和g _m3）的谐波，电压截取点（VIP ₂和VIP ₃），功率截取点（IIP ₃）和1-dB压缩点在FTJ-TFET中。结果表明，t _FE的缩放对FTJ-TFET中的RF /模拟和线性性能有显着影响。t _FE的减少改善了RF /模拟性能，而抑制了线性特性。此外，通过数值仿真器突出了对FTJ-TFET与铁电TFET（F-TFET）和常规TFET的传输特性，BTBT速率，电子密度和电场的比较研究。