The Electro-Magnetic (EM) MEMS switches are playing an important role in our everyday life due to their high efficiency and system integrity. The design, modelling and testing of MEMS EM switch is presented in this research work. This chip-based MEMS switch is fabricated using 0.35 µm Complementary Metal Oxide Semiconductor (CMOS) three metals-two poly technology, released i.e., post micromachining and packaged in Dual Inline package (DIP). The electromagnetic actuation-based CMOS-MEMS switch consists of two central coils joined to each other and two supporting beams. The two coils actuate in torsional mode by passing DC as well as AC current through coils. Switch is tested in static and dynamic modes. Actuation voltages of 68 V are measured in the static mode, while in dynamic mode, voltages are 68 mV. Finally, compared theoretical and experimental measurements.

电磁（EM）MEMS开关由于其高效率和系统完整性而在我们的日常生活中发挥着重要作用。这项研究工作介绍了MEMS EM开关的设计，建模和测试。这款基于芯片的MEMS开关采用0.35 µm互补金属氧化物半导体（CMOS）的三金属二多晶硅技术制造，发布即微加工后并封装在双列直插式封装（DIP）中。基于电磁驱动的CMOS-MEMS开关由两个相互连接的中央线圈和两个支撑梁组成。这两个线圈通过使直流电流和交流电流通过线圈而以扭转模式进行致动。开关在静态和动态模式下进行了测试。在静态模式下测得的激励电压为68 V，而在动态模式下测得的激励电压为68 mV。最后，