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Substrate rotation effect over scaling roughness exponents in Zr thin films grown by GLAD technique
Applied Surface Science ( IF 6.7 ) Pub Date : 2021-04-25 , DOI: 10.1016/j.apsusc.2021.149660
S. Mendoza-Rincón , M.S. Ospina-Arroyave , D.F. Arias Mateus , D. Escobar-Rincón , E. Restrepo-Parra

In this work, roughness scaling behavior of glancing angle deposited Zr thin films by DC magnetron sputtering at different substrate rotation speeds, have been studied using height-height correlation function (HHCF) and power spectral density (PSD) function analysis, from atomic force microscopy scans. The Zr thin films exhibit a local roughness exponent close to the unity. However, the growth exponent increases with rotation speed from 0.9 to 1.1. The PSD plot exhibits a characteristic peak, indicating a mound-like growth. Distance between mounds (characteristic length) decreases as rotation increases, demonstrating a reduction of the shadowing effect. It is concluded that the increase of beta is due to the remission process. Incoming atoms lose more kinetic energy when colliding with a substrate in motion, which leads an increase in the sticking coefficient.



中文翻译:

GLAD技术生长的Zr薄膜中基体旋转效应对结垢粗糙度指数的影响

在这项工作中,使用原子高度显微镜研究了高度-高度相关函数(HHCF)和功率谱密度(PSD)函数,研究了在不同基板转速下通过DC磁控管溅射掠过角度沉积的Zr薄膜的粗糙度定标行为。扫描。Zr薄膜的局部粗糙度指数接近于1。但是,增长指数随着旋转速度从0.9到1.1的增加而增加。PSD图显示出特征峰,表明丘状生长。土墩之间的距离(特征长度)随着旋转的增加而减小,这表明阴影效果降低了。可以得出结论,β的增加归因于缓解过程。当传入的原子与运动中的底物碰撞时,它们会损失更多的动能,

更新日期:2021-05-07
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