The undoped zinc oxide (ZnO) and carbon-doped zinc oxide (C:ZnO) thin films were synthesized with different process temperatures by using a chemical vapor deposition technique. The fractal dimension of AFM images was evaluated by power spectral density function, spatial function distribution, cube counting, and triangular counting by Gwyddion software. AFM results reveal undoped and C:ZnO indicated a larger particle size (~ 1.5 µm) and 200–50 nm, respectively, with increase in process temperature from 650 to 750 °C. The estimated lattice strain varied from 0.0033 to 0.0008 and 0.0038 to 0.0078 corresponding to the process temperature 650–750 °C for ZnO and C:ZnO thin films, respectively. The oxygen and zinc contents varied from 43.65 to 47.16 at.% and 47.13 to 33.83 at.%, respectively. The optical bandgap varied from 3.17 to 3.19 eV and 3.14 to 3.06 eV for undoped ZnO and C:ZnO thin films, respectively, and I_D/I_G varied 1.97–2.22 as the carbon content increased from 9.21 to 19 at.%. Photoluminescence of C:ZnO indicated deep level defect shifted from 481.56 to 515.1 nm with increase in process temperature from 650 to 750 °C. The possible bonding network of core orbital of Zn(2p), C(1s), and O(1s) in the C:ZnO thin films has been discussed by deconvolution with the Origin 2018.

通过化学气相沉积技术，在不同的工艺温度下合成了未掺杂的氧化锌（ZnO）和碳掺杂的氧化锌（C：ZnO）薄膜。AFM图像的分形维数通过功率谱密度函数，空间函数分布，立方计数和Gwyddion软件进行的三角计数进行了评估。原子力显微镜的结果表明，随着工艺温度从650升高到750°C，未掺杂和C：ZnO分别具有更大的粒径（〜1.5 µm）和200–50 nm。估计的晶格应变在0.0033至0.0008和0.0038至0.0078之间变化，分别对应于ZnO和C：ZnO薄膜的工艺温度650-750°C。氧和锌的含量分别为43.65至47.16 at。％和47.13至33.83 at。％。光学带隙在3.17至3.19 eV和3.14至3之间变化。当碳含量从9.21增加到19 at。％时，I _D / I _G变化1.97-2.22。C：ZnO的光致发光表明随着工艺温度从650到750°C的升高，深能级缺陷从481.56 nm迁移到515.1 nm。通过与Origin 2018的解卷积讨论了C：ZnO薄膜中Zn（2 p），C（1 s）和O（1 s）的核心轨道的可能键合网络。