We report here structural, electrical, photoluminescence (PL), and optical investigations of ZnO nanoparticles. The ZnO samples are initially sintered at various temperatures (T_s) (600–1200 °C) temperatures and their size is reduced twice to nanoscale by using ball friction at 200 rpm rotational speed and 30 min duration. It is found that the T_s do not influence the well-known peaks associated with the ZnO hexagonal structure, whereas the constants of the lattice and the average crystallite diameters are affected. Although the nonlinear area is observed for all samples in the I-V curves, the breakdown field E_B and nonlinear coefficient β are moved to lower values as T_s increases, while the residual voltage K_r and nonlinear conductivity (σ₂) are increased. The empirical relations for K_r, E_B, and β as a function of T_s are; K_r = 0.004 T_s− 0.487, E_B = − 1.786 T_s + 2559.5 and β = − 0.052 T_s + 75.19. On the other hand, a maximum UV absorption shift (A_max) is obtained at 412 nm, 400 nm, 384 nm, and 326 nm as the T_s increases up to 1200 °C. For each sample, two different energy band gap values are obtained; the first is called the basic bandgap (E_gh) and its value above 3 eV, while the second is called the optical band gap (E_gL), and its value below 2.1 eV. Moreover, the empirical relations of them are E_gh = 0.002 T_s− 0.24, E_gl = − 0.0033 T_s + 5.242 and ∆E =− 0.0015 T_s + 5.002. Furthermore, the values of (N/m^*) and lattice dielectric constant ε_L are increased by increasing T_s up to 1200 °C, while the vice is versa for the interatomic distance R. The dielectric loss tan δ is almost linear above 4 eV for all samples, and it decreases sharply as the T_s increases. The optical and electrical conductivities σ_opt and σ_ele are decreased as the T_s increases up to 1200 °C. Finally, the characteristic of UV band edges against the optimum value of PL intensity for the samples shows 8-continuous peaks. Furthermore, the PL intensity of the peaks is decreased by increasing T_s and also by shifting the UV wave number towards the IR region.

我们在这里报告ZnO纳米颗粒的结构，电学，光致发光（PL）和光学研究。首先在各种温度（T _s）（600–1200°C）的温度下烧结ZnO样品，然后通过使用200 rpm的转速和30分钟的持续时间的球摩擦将其尺寸减小至纳米级两次。发现T _s不会影响与ZnO六角形结构相关的众所周知的峰，而晶格常数和平均微晶直径会受到影响。尽管在IV曲线中所有样本都观察到非线性区域，但随着T _s的增加，击穿电场E _B和非线性系数β移至较低值，而残余电压K _r和非线性电导率（σ ₂）增加。K _r，E _B和β的经验关系是T _s的函数；K _r  = 0.004 T _s -0.487，E _B  =  -1.786 T _s + 2559.5，β=-0.052 T _s  + 75.19。另一方面，随着T _s升高至1200℃ ，在412nm，400nm，384nm和326nm处获得最大的UV吸收位移（A _max）。对于每个样品，获得了两个不同的能带隙值。第一个称为基本带隙（E _gh），其值大于3 eV，第二个称为光学带隙（E _gL），且其值低于2.1 eV。此外，它们的经验关系为E _gh  = 0.002 T _s -0.24，E _gl  =-0.0033 T _s  + 5.242和∆E =-0.0015 T _s  + 5.002。此外，（N / M的值^*）和晶格介电常数ε_大号是通过增加Ť _š高达1200℃，而副是反之亦然为原子间距离R的介电损耗tanδδ几乎是线性的上述4所有样品的eV，随着T _s的增加而急剧下降。光学和电导率σ_选择和σ _ELE被减少与T_小号升高至1200°C。最后，针对样品的PL强度最佳值，UV波段边缘的特征显示出8个连续的峰。此外，通过增加T _s以及通过将UV波数移向IR区域来降低峰的PL强度。