We present a novel semiconductor single-photon source based on tensile-strained (111)-oriented GaAs/InAlAs quantum dots (QDs) exhibiting ultrasmall exciton fine-structure splitting (FSS) of ≤ 8 eV. Using low-temperature micro-photoluminescence spectroscopy, we identify the biexciton-exciton radiative cascade from individual QDs, which, combined with small FSS, indicates these self-assembled GaAs(111) QDs are excellent candidates for polarization-entangled photon-pair generation.

中文翻译：

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自组装 GaAs/InAlAs(111)A 量子点产生单光子，具有超小精细结构分裂

我们提出了一种基于拉伸应变 (111) 取向 GaAs/InAlAs 量子点 (QD) 的新型半导体单光子源，其表现出≤8 的超小激子精细结构分裂 (FSS) EV。使用低温微光致发光光谱，我们从单个 QD 中识别出双激子 - 激子辐射级联，结合小 FSS，表明这些自组装 GaAs(111) QD 是偏振纠缠光子对生成的极好候选者。