This work investigates the design methodology to obtain large electromechanical coupling factor () and high quality factor (Q) of shear-horizontal surface acoustic wave (SH-SAW) resonators based on the thin-film lithium niobate-on-insulator (LNOI) technology. The guided SH wave can be excited through interdigital transducers and propagate at the very surface of the material stackings. Such a guided SH wave in LN/SiO₂ double layer structure is expected to offer high by confining the elastic strain energy in the piezoelectric thin film. To capture the optimum design window for high-performance LNOI SH-SAW devices, the impact of electrode material and its thickness on the dispersive characteristics are intensively investigated by finite element method (FEM). In this study, various one-port resonators with wavelengths from 2.8 μm to 8 μm were fabricated on a LNOI wafer with LN and SiO₂ thickness of 0.7 and 2 μm, respectively. The 100 nm thick gold film was chosen as the electrode of the devices, which demonstrate a similar dispersive behavior to the FEM simulation with small discrepancy. Among the measurement results over several tested samples, a high- of 25.5% and Q of 960 was recorded at a resonance frequency of 581 MHz (FOM = = 245), revealing great potential for the application of wide-band frequency selection in telecommunications.

这项工作研究了基于薄膜铌酸锂绝缘体 (LNOI) 技术获得大机电耦合因子 ( ) 和高品质因子 ( Q ) 剪切水平表面声波 (SH-SAW) 谐振器的设计方法。 . 引导的 SH 波可以通过叉指式换能器激发并在材料堆叠的表面传播。LN/SiO ₂双层结构中的这种引导SH波有望通过将弹性应变能限制在压电薄膜中来提供高。为了获得高性能 LNOI SH-SAW 器件的最佳设计窗口，电极材料及其厚度对通过有限元方法 (FEM) 对色散特性进行了深入研究。在这项研究中，与来自2.8的波长不同的单口谐振器μ m至8 μ m的制造成具有LN和SiO一个LNOI晶片上₂的0.7和2厚度μ分别米。选择 100 nm 厚的金膜作为器件的电极，其表现出与FEM 模拟类似的色散行为，但差异很小。间在若干测试的样品，一个高的测量结果的25.5％和Q 960在581兆赫的共振频率被记录（FOM = = 245），揭示了宽带频率选择在电信中应用的巨大潜力。