Quantum materials are central for the development of novel functional systems that are often based on interface specific phenomena. Fabricating controlled interfaces between quantum materials requires adopting a flexible growth technique capable to synthesize different materials within a single-run deposition process with high control of structure, stoichiometry, and termination. Among the various available thin film growth technologies, pulsed laser deposition (PLD) allows controlling the growth of diverse materials at the level of single atomic layers. In PLD the atomic species are supplied through an ablation process of a stoichiometric target either in form of polycrystalline powders or of a single crystal. No carrier gases are needed in the deposition process. The ablation process is compatible with a wide range of background pressure. We present results of thin-film growth by PLD obtained by using an Nd:YAG infrared pulsed laser source operating at its first harmonics. With respect to the traditional PLD systems—based on excimer KrF UV-lasers—optimal conditions for the growth of thin films and heterostructures are reached at large target-to-substrate distance. Merits and limitations of this approach for growing oxide and non-oxide thin films are discussed. The merits of an Nd:YAG laser to grow very high-quality thin films suggest the possibility of implementing compact in-situ setups e.g. integrated with analytical instrumentation under ultra-high vacuum conditions.

量子材料对于开发通常基于界面特定现象的新型功能系统至关重要。在量子材料之间制造受控界面需要采用灵活的生长技术，该技术能够在单次沉积过程中合成不同的材料，并对结构、化学计量和终止进行高度控制。在各种可用的薄膜生长技术中，脉冲激光沉积 (PLD) 允许在单原子层级别控制不同材料的生长。在 PLD 中，原子种类通过化学计量目标的烧蚀过程以多晶粉末或单晶的形式提供。在沉积过程中不需要载气。消融过程与广泛的背景压力兼容。我们展示了通过使用 Nd:YAG 红外脉冲激光源在其一次谐波下工作获得的 PLD 薄膜生长结果。相对于基于准分子 KrF 紫外激光器的传统 PLD 系统，薄膜和异质结构生长的最佳条件是在大的目标到基板距离处达到的。讨论了这种用于生长氧化物和非氧化物薄膜的方法的优点和局限性。Nd:YAG 激光器在生长非常高质量的薄膜方面的优点表明实现紧凑型的可能性 相对于基于准分子 KrF 紫外激光器的传统 PLD 系统，薄膜和异质结构生长的最佳条件是在大的目标到基板距离处达到的。讨论了这种用于生长氧化物和非氧化物薄膜的方法的优点和局限性。Nd:YAG 激光器在生长非常高质量的薄膜方面的优点表明了实现紧凑型的可能性 相对于基于准分子 KrF 紫外激光器的传统 PLD 系统，薄膜和异质结构生长的最佳条件是在大的目标到基板距离处达到的。讨论了这种用于生长氧化物和非氧化物薄膜的方法的优点和局限性。Nd:YAG 激光器在生长非常高质量的薄膜方面的优点表明实现紧凑型的可能性原位设置，例如在超高真空条件下与分析仪器集成。