Changes in the resistance of a Ag_2+δ S nano-island, in which non-stoichiometric δ-Ag atoms work as a dopant in an n-type semiconductor, was induced by electrochemical removal of the dopant δ-Ag atoms using conductive-atomic force microscopy. The removed Ag atoms grew a Ag nanowire on a nano-island, the height of which corresponded to the measured resistance. Conductance (1/resistance) linearly decreased as the height of a Ag nanowire increased, in accordance with the theory of semiconductor conductivity. The technique has the potential for the dynamic control of conductance in nanostructures post-fabrication.

中文翻译：

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去除掺杂剂 δ-Ag 原子后 Ag2+δ S 纳米岛电阻变化的测量

在Ag的电阻变化_{2+ δ} 小号纳米岛，其中非化学计量δ -Ag原子工作作为在n型半导体的掺杂剂，诱导电化学去除掺杂的δ使用conductive- -Ag原子原子力显微镜。去除的银原子在纳米岛上生长出银纳米线，其高度对应于测量的电阻。根据半导体电导率理论，电导率（1/电阻）随着银纳米线高度的增加而线性下降。该技术具有动态控制制造后纳米结构电导的潜力。