The forward current–voltage characteristics of p-type diamond pseudo-vertical Schottky barrier diodes are investigated via numerical simulation. Impact ionization decrease the hole concentration of the p− drift layer from 10¹⁵ to 10¹⁴cm^–3 at 300K, thereby increasing the forward voltage drop and on-resistance. When we consider an incomplete ionization with increasing temperature, the increase in the hole concentration is more dominant than the enhanced phonon scattering, thereby resulting in an increasing forward current. We modified the Ohmic contact for both metallic conduction at the p+layer and incomplete ionization at the p– drift layer. The Baliga figure-of-merit of the device with and without incomplete ionization is 25 and 192MWcm⁻², respectively. Incomplete ionization should be considered in the numerical study of diamond power devices.

通过数值模拟研究了 p 型金刚石伪垂直肖特基势垒二极管的正向电流 - 电压特性。碰撞电离在 300K时将 p- 漂移层的空穴浓度从 10 ^{15 降低}到 10 ¹⁴ cm ^–3，从而增加正向压降和导通电阻。当我们考虑随温度升高的不完全电离时，空穴浓度的增加比声子散射增强更占主导地位，从而导致正向电流增加。我们修改了 p+ 层金属导电和 p-漂移层不完全电离的欧姆接触。有和没有不完全电离的装置的 Baliga 品质因数为 25 和 192MWcm ^-2， 分别。在金刚石功率器件的数值研究中应考虑不完全电离。