We report the basic electrical characteristics and uniformity of 25 Au/Ni Schottky barrier diodes (SBDs) with three different surface treatments ((I) no treatment (as-grown), (II) alkaline solution, and (III) HCl related solution) before and after post-metallization annealing at 400 C. The SBDs with (II) showed small diode-to-diode variation in the Schottky barrier height and the ideality factor, and good uniformity over the electrode. In addition, after the annealing, the reverse-biased current significantly reduced to the prediction by the thermionic field emission model. Similar characteristics were obtained for the SBDs with (I), however, the uniformity over the electrode became worse after the annealing. For the SBDs with (III), the diode-to-diode variation was originally large, and the reverse-biased current did not significantly reduce. In addition, inhomogeneity with a line-shape pattern was observed in some SBDs with the large reverse-biased current. Residual Cl atoms may be responsible for low-barrier nature.

我们报告了 25 Au/Ni 肖特基势垒二极管 (SBD) 的基本电气特性和均匀性，这些二极管经过三种不同的表面处理（（I）未处理（生长时）、（II）碱性溶液和（III）HCl 相关溶液）在 400 C 后金属化退火之前和之后。具有 (II) 的 SBD 在肖特基势垒高度和理想因子方面显示出很小的二极管到二极管变化，并且在电极上具有良好的均匀性。此外，退火后，反向偏置电流显着降低到热电子场发射模型的预测。具有 (I) 的 SBD 获得了类似的特性，但是，退火后电极上的均匀性变得更差。对于具有（III）的 SBD，二极管到二极管的变化本来就很大，反向偏置电流并没有显着降低。此外，在一些具有大反向偏置电流的 SBD 中观察到具有线形图案的不均匀性。残留的 Cl 原子可能是造成低势垒性质的原因。