We applied a damage-free substrate removal technique using photoelectrochemical etching (PECE) by incorporating sacrificial layer In_0.12Ga_0.88N single quantum well (SL-SQW) types in semipolar () flip-chip laser diode (FC-LD) structures. Although 40nm type I promoted the development of high-quality green active region devices in terms of managing strain relaxation, processing was required under low-temperature KOH. However, 10nm type II exhibited a smooth n-type GaN surface with room-temperature KOH, thereby promoting the applicability of the proposed technique for either a short light emitter or a combination with type I. The temperature-dependent PECE of SL-SQW types is important in realizing advanced FC-LDs.

我们应用使用通过将牺牲层光电化学蚀刻（PECE）一个无损伤的衬底去除技术在_0.12镓_0.88 N个单量子阱（SL-SQW）类型半极性（）倒装芯片激光二极管（FC-LD）的结构。虽然40nm I型在管理应变松弛方面促进了高质量绿色有源区器件的发展，但需要在低温KOH下进行处理。然而，10nm II 型表现出具有室温 KOH 的光滑 n 型 GaN 表面，从而提高了所提出的技术对于短光发射器或与 I 型组合的适用性。 SL-SQW 型的温度相关 PECE对实现先进的 FC-LD 很重要。