The quantum ballistic transmission properties of an electrically-doped guanine-nanosheet-based bio-Zener diode are investigated using density functional theory and nonequilibrium Green’s function-based first-principles calculations. The bio-Zener diode is gate-bias modulated, and its various quantum-electronic properties, for example, the V–I characteristic, the transmission spectra, and the device density of states, depend on both the electrical doping concentration and on the applied gate bias voltage. The junctionless highly doped bio-Zener diode shows high levels of reverse-bias current which is dominated by majority charge carriers. It is also found that, due to the presence of a wide bandgap and the backscattering effect, the forward-bias current is highly suppressed. The quantum simulation results confirm a strong reverse gate-bias-modulated biased current–voltage response as well as a charge transport phenomenon through the effective device region. The bio-Zener diode exhibits a specific reverse breakdown that can be varied from −0.78 to −3.2 V without affecting the forward current–voltage characteristic. The current findings are obtained by including the coherent tunneling and incoherent hopping processes with a minimal Hamiltonian model approach.

利用密度泛函理论和基于非平衡格林函数的第一性原理研究了基于电掺杂鸟嘌呤-纳米片的生物-齐纳二极管的量子弹道传输特性。bio-Zener二极管是经过栅极偏置调制的，其各种量子电子特性（例如，V – I）特性，透射光谱和器件的状态密度既取决于电掺杂浓度，又取决于所施加的栅极偏置电压。无结高掺杂生物齐纳二极管显示出高水平的反向偏置电流，该电流主要由多数电荷载流子控制。还发现，由于宽带隙的存在和后向散射效应，正向偏置电流被高度抑制。量子仿真结果证实了强大的反向栅极偏置调制偏置电流-电压响应以及通过有效器件区域的电荷传输现象。生物Zener二极管具有特定的反向击穿电压，其变化范围为-0.78至-3.2 V，而不会影响正向电流-电压特性。