The influence of perpendicular magnetic anisotropy (PMA) and current-induced magnetization switching on different capping materials, especially heavy metal (HM) materials has been rarely studied. In this work, the dependence of HM capping layer on interfacial PMA and current-induced magnetization switching in Pt/Co/HM tri-layered structures were investigated, where HM is Ta, Pt and W. We found that the Co/HM interface play a significant role on the PMA. Especially, the structure with a Ta capping layer features the largest anisotropy energy density K_U of 3.15 Merg/cm³ and the largest spin-orbit torques (SOT) switching efficiency ${\eta }_{SOT}$ of 0.19, which can be attributed to the different spin-orbit coupling and interfacial hybridization between Co and HM layers. Furthermore, the Pt/Co/Ta structure has dissimilar metals (Pt and Ta) with opposite spin Hall angles on the opposite sides of the ferromagnetic Co. We also investigated the Co layer thickness t_Co dependence of PMA and switching current density, indicating the lower switching field can reduce the switching current density in the PMA region.

很少研究垂直磁各向异性（PMA）和电流感应的磁化转换对不同盖材料的影响，尤其是重金属（HM）材料。在这项工作中，研究了HM覆盖层对Pt / Co / HM三层结构中界面PMA和电流感应磁化转换的依赖性，其中HM为Ta，Pt和W。我们发现Co / HM界面起着作用在PMA上扮演重要角色。尤其是，具有Ta覆盖层的结构具有3.15 Merg / cm ³的最大各向异性能密度K _U和最大的自旋轨道转矩（SOT）转换效率${\eta }_{\mathrm{小号}ØŤ}$0.19，这可以归因于Co和HM层之间不同的自旋轨道耦合和界面杂交。此外，Pt / Co / Ta结构在铁磁Co的相对两侧具有不同的自旋霍尔角的不同金属（Pt和Ta）。我们还研究了PMA和开关电流密度对Co层厚度t _Co的依赖性，表明较低的开关场可以降低PMA区域中的开关电流密度。