当前位置:
X-MOL 学术
›
IEEE J. Electron Devices Soc.
›
论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Direct Defect-Level Analysis of Metal–Insulator–Metal Capacitor Using Internal Photoemission Spectroscopy
IEEE Journal of the Electron Devices Society ( IF 2.3 ) Pub Date : 2021-04-14 , DOI: 10.1109/jeds.2021.3073220 Tae Jin Yoo , Hyeon Jun Hwang , Soo Cheol Kang , Sunwoo Heo , Ho-In Lee , Young Gon Lee , Hokyung Park , Byoung Hun Lee
IEEE Journal of the Electron Devices Society ( IF 2.3 ) Pub Date : 2021-04-14 , DOI: 10.1109/jeds.2021.3073220 Tae Jin Yoo , Hyeon Jun Hwang , Soo Cheol Kang , Sunwoo Heo , Ho-In Lee , Young Gon Lee , Hokyung Park , Byoung Hun Lee
Barrier height (
$\phi _{b}$
), trap state, bandgap (
$E_{g}$
), and band alignment information of the metal–ZrO
2
–metal capacitor have been extracted using internal photoemission (IPE) system. By correlating the IPE analysis with I-V and C-V characteristics obtained before and after rapid thermal annealing, origin and transformation of defect states have been successfully investigated. Our analysis revealed that deep-level defects originating from oxygen vacancies near the top electrode are causing of leakage current in MIM capacitor and these defects can be effectively reduced by a proper thermal annealing.
中文翻译:
使用内部光发射光谱法直接分析金属-绝缘体-金属电容器的缺陷水平
栅栏高度( $ \ phi _ {b} $
),陷阱状态,带隙(
$ E_ {g} $
),并
使用内部光电发射(IPE)系统提取了金属– ZrO 2 –金属电容器的能带对准信息
。通过将IPE分析与快速热退火前后获得的IV和CV特性相关联,已成功研究了缺陷状态的起源和转变。我们的分析表明,源自顶部电极附近的氧空位的深层缺陷正在引起MIM电容器中的漏电流,并且可以通过适当的热退火有效地减少这些缺陷。
更新日期:2021-04-23
中文翻译:
使用内部光发射光谱法直接分析金属-绝缘体-金属电容器的缺陷水平
栅栏高度(