In this article, we investigate the effect of prolonged light exposure on silicon heterojunction solar cells. We show that, although light exposure systematically improves solar cell efficiency in the case of devices using intrinsic and p-type layers with optimal thickness, this treatment leads to performance degradation for devices with an insufficiently thick (p) layer on the light-incoming side. Our results indicate that this degradation is caused by a diminution of the (i/p)-layer stack hole-selectivity because of light exposure. Degradation is avoided when a sufficiently thick (p) layer is used, or when exposure of the (p) layer to UV light is avoided, as is the case of the rear-junction configuration, commonly used in the industry. Additionally, applying a forward bias current or an infrared light exposure results in an efficiency increase for all investigated solar cells, independently of the (p)-layer thickness, confirming the beneficial influence of recombination on the performance of silicon heterojunction solar cells.

中文翻译：

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浸光对不同结构的硅异质结太阳能电池的影响

在本文中，我们研究了长时间曝光对硅异质结太阳能电池的影响。我们表明，尽管在使用具有最佳厚度的本征层和p型层的器件的情况下，曝光可以系统地提高太阳能电池的效率，但这种处理会导致光入射侧上（p）层厚度不足的器件的性能下降。我们的结果表明，这种降解是由于（i / p）层堆叠空穴选择性降低而导致的，这是由于曝光所致。当使用足够厚的（p）层时，或者当避免（p）层暴露于UV光时，如在工业中通常使用的后结结构的情况一样，避免了降解。此外，