The present study reports the investigation of the structure, morphology, optical and electronic properties of the annealed thin films of the semiconducting Ge₁₀Se₇₅Ag₁₅ composition. The crystalline phases Ag₂Se, GeSe₂ and Se were found in the Ge₁₀Se₇₅Ag₁₅ thin films and their crystallites size, strain and the dislocation density were changed by the variation of the temperature. These results confirmed the occurrence of the amorphous-crystallization phase transition in Ge₁₀Se₇₅Ag₁₅ films. Many linear, nonlinear optical and electronic parameters were determined which also showed a variation with the temperature. The dependence of the refractive index on the electronic polarizability was examined. The band gap increased from 1.67 to 1.85 eV while the width of localized tail states decreased from 0.022 to 0.010 eV with the increasing the annealing temperature which indicates that the localized states have a role in controlling the band gap of the investigated films. The relation between the refractive index and band gap enabled us to get the values of the refractive index by different methods. Also from the present results we conclude that the annealing temperature has a role in tuning as well as optimizing the optical and electronic parameters of the fabricated films. The results were discussed in terms of different proposed models.

本研究报告了对半导体Ge ₁₀ Se ₇₅ Ag ₁₅组成的退火薄膜的结构，形态，光学和电子性质的研究。在Ge ₁₀ Se ₇₅ Ag ₁₅薄膜中发现了Ag ₂ Se，GeSe ₂和Se的结晶相，其微晶尺寸，应变和位错密度随温度的变化而变化。这些结果证实了在Ge ₁₀ Se ₇₅ Ag _15中发生非晶-结晶相变。电影。确定了许多线性，非线性光学和电子参数，这些参数也随温度变化。检查了折射率对电子极化率的依赖性。随着退火温度的升高，带隙从1.67 eV增加到1.85 eV，而局部尾态的宽度从0.022 eV减小到0.010 eV，这表明局部化状态在控制所研究薄膜的带隙中起一定作用。折射率和带隙之间的关系使我们能够通过不同的方法获得折射率的值。同样从目前的结果，我们得出结论，退火温度在调整以及优化所制造的膜的光学和电子参数方面具有作用。