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Investigation of the Features of InAs/GaAs Structures with Quantum Dots by Information-Correlation Characteristics
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2021-04-21 , DOI: 10.1134/s1027451021020312
N. V. Rybina , A. V. Zdoroveyschev , N. B. Rybin

Abstract

The paper presents a technique for calculating information-correlation characteristics based on the methods of average mutual information and two-dimensional detrended fluctuation analysis. The experimental samples are structures with an array of self-organized InAs/GaAs quantum dots grown without a cover layer by gas-phase epitaxy from metalorganic compounds. The microstructure of the sample surfaces is studied by scanning electron microscopy. The information-correlation characteristics of InAs/GaAs structures with quantum dots are obtained using two-dimensional detrended fluctuation analysis and average mutual information. The order of the array of quantum dots in the InAs/GaAs structure is estimated depending on the applied technological modes of production. It is found that increasing the growth temperature of the experimental samples from 480 to 520°C increases the ordering of the location of quantum dots on the surface.



中文翻译:

信息相关特性研究带量子点的InAs / GaAs结构的特征

摘要

本文提出了一种基于平均互信息和二维去趋势波动分析的信息相关特征计算技术。实验样品是具有自组织的InAs / GaAs量子点阵列的结构,这些量子点通过气相外延从有机金属化合物中生长而没有覆盖层。通过扫描电子显微镜研究样品表面的微观结构。利用二维去趋势波动分析和平均互信息获得了具有量子点的InAs / GaAs结构的信息相关特性。InAs / GaAs结构中量子点阵列的顺序取决于所应用的生产技术模式。

更新日期:2021-04-21
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