Overheating is the cause of PIN limiter diode damage under a high-power electromagnetic pulse, but the physical mechanism for overheating has not previously been clarified and thus is studied in this paper through measurements and simulations. The damage process of the PIN limiter diode SMP1330 is measured first, where a drastic voltage drop is observed. The mechanism causing the voltage drop is analyzed by using semiconductor device simulation. It is found a negative differential resistance is formed by the avalanche process after the first breakdown. This causes current filamentation and local overheating at the filament position, which overheats and, therefore, damages the diode.

在大功率电磁脉冲下，过热是PIN限流二极管损坏的原因，但是过热的物理机制尚未得到阐明，因此本文通过测量和模拟对其进行了研究。首先测量PIN限流二极管SMP1330的损坏过程，在此过程中会观察到急剧的电压降。通过使用半导体器件仿真来分析引起电压降的机理。发现第一次击穿后，雪崩过程会形成负的差分电阻。这会导致电流灯丝化和灯丝位置处的局部过热，从而导致过热，从而损坏二极管。