This article presents a $Ku$ -band power amplifier with a series-shunt $LC$ notch filter in 65-nm CMOS. The notch filter is integrated into the inter-stage matching network to attenuate the receiver-band noise, thereby reducing transmitter-to-receiver interference. A comprehensive analysis of the series and the shunt notch filters, as well as the position to apply the notch filter is discussed. Besides, a systematic method of optimizing passive devices in the notch filter is proposed to further improve network $Q$ and minimize the influence on the power amplifier. Fabricated in 65-nm CMOS technology, the power amplifier prototype delivers a measured gain of 21.9 dB with 3-dB bandwidth from 13.7 GHz to 16.7 GHz at the nominal state. At 14.2 GHz, it can offer a saturated output power of 14.5 dBm with peak power added efficiency of 24.1%. The notch frequency is adjustable from 10.3 to 11.9 GHz to offer the best attenuation at the receiver band. From 10 to 12 GHz, a maximal attenuation of 30 dB is achieved. The design occupies a core area of $0.35\times 0.85$ mm ² .

中文翻译：

---

一种 苦带串联并联的带状CMOS功率放大器 液相色谱 卫星通信陷波滤波器

本文介绍了 $ Ku $ 串联分流的波段功率放大器 $ LC $ 65纳米CMOS中的陷波滤波器 陷波滤波器被集成到级间匹配网络中，以衰减接收器频带噪声，从而减少发射器之间的干扰。讨论了对串联陷波滤波器和并联陷波滤波器的全面分析，以及应用陷波滤波器的位置。此外，提出了一种陷波滤波器中优化无源器件的系统方法，以进一步改善网络。 $ Q $ 并最小化对功率放大器的影响。功率放大器原型采用65 nm CMOS技术制造，在标称状态下具有11.9 GHz至16.7 GHz的3 dB带宽，可提供21.9 dB的测量增益。在14.2 GHz时，它可以提供14.5 dBm的饱和输出功率，峰值功率附加效率为24.1％。陷波频率可在10.3至11.9 GHz之间调节，以在接收器频带上提供最佳衰减。在10至12 GHz范围内，可实现30 dB的最大衰减。设计占据了一个核心领域 $ 0.35 \次0.85 $ 毫米 ² 。