MOS N-path mixer-first receivers are capable of providing instantly-reconfigurable RF impedance and bandwidth while achieving moderate noise figure (NF) and high linearity, but their frequency tuning range is limited by both LO (local oscillator) generation and the RF port input capacitance. State-of-the-art mm-wave MOS N-path receivers often compromise performance to cover the mm-wave range, but this paper presents the theory and design considerations for a new topology of N-path mixer which makes use of high f _T HBTs and breaks this trade-off between performance and tuning range. Here, we borrow from a previously derived LTI model for MOS-based N-path mixers to derive an analogous model for the HBT-based counterpart which provides a meaningful comparison between the performance of the two topologies. We show that the HBT-based implementation is capable of operation beyond the frequency limits of MOS-based implementations while maintaining comparable NF and linearity without consuming exorbitant power. Measurements done on a proof-of-concept chip in GlobalFoundries BiCMOS8HP are consistent with our models and simulations. By organizing process parameters and user-selected design variables into dimensionless ratios, we provide expressions for key performance metrics which enable the designer to make informed decisions about trade-offs and optimizations for both LO generation and the mixer core.

中文翻译：

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基于HBT的阻抗透明性和性能指标 ñmmWave应用的多路径混合器

MOS N路径混频器优先接收器能够提供即时可重新配置的RF阻抗和带宽，同时实现适度的噪声系数（NF）和高线性度，但是它们的频率调谐范围受到LO（本地振荡器）生成和RF端口的限制输入电容。最新的毫米波MOS N路径接收器通常会折衷性能以覆盖毫米波范围，但本文介绍了使用高f的N路径混频器新拓扑的理论和设计注意事项 _ŤHBT打破了性能和调整范围之间的折衷。在这里，我们从先前导出的基于MOS的N路径混合器的LTI模型中借用，以导出基于HBT的对应模型的类似模型，该模型提供了两种拓扑的性能之间的有意义的比较。我们表明，基于HBT的实现方式能够在基于MOS的实现方式的频率限制之外运行，同时保持可比的NF和线性度，而不会消耗过多的功率。在GlobalFoundries BiCMOS8HP中的概念验证芯片上进行的测量与我们的模型和仿真一致。通过将过程参数和用户选择的设计变量组织为无量纲比率，