Micro-displacement measurement is essential in precision fields, such as precision positioning, micro-vibration control and biological engineering. Conventional sensors have disadvantages of susceptibility to environmental, high cost and difficulty in integration. To address these deficiencies, this paper developed a novel displacement sensor with nanometric resolution based on magnetoelectric effect. Combining equivalent magnetic circuit method and equivalent circuit method for magnetoelectric effect using the nonlinear constitutive parameters, an equivalent circuit model of the proposed sensor is established to analyse and predict the performance of displacement sensor. Then a prototype of sensor based on Terfenol-D/PZT composites is fabricated, and the performance of prototype for dynamic displacement amplitude and static position measurement are tested. The results not only validate the developed equivalent circuit model, but also evidence the potential of magnetoelectric displacement sensor. Especially for dynamic displacement amplitude measurement, the resolution of it is better than 13.27 nm, which is close to or even beyond commercial laser displacement sensor.

中文翻译：

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基于磁电效应的纳米分辨率位移传感器

微位移测量在精密领域至关重要，例如精密定位，微振动控制和生物工程。传统的传感器具有易受环境影响，成本高以及难以集成的缺点。为了解决这些不足，本文基于磁电效应开发了一种具有纳米分辨率的新型位移传感器。结合等效非线性电路方法和利用非线性本构参数的磁电效应等效电路方法，建立了所提出传感器的等效电路模型，以分析和预测位移传感器的性能。然后制造出基于Terfenol-D / PZT复合材料的传感器原型，并测试了用于动态位移幅度和静态位置测量的原型的性能。结果不仅验证了开发的等效电路模型，而且证明了磁电位移传感器的潜力。特别是对于动态位移幅度测量，其分辨率优于13.27 nm，接近或什至超过商用激光位移传感器。