We demonstrate a distributed feedback (DFB) semiconductor laser based on i-line lithography and surface periodic current injection technologies with a lasing wavelength of 795 nm, which corresponds to the D1 spectrum of Rb and has many applications with respect to alkali vapor lasers and atomic clocks. The maximum output power, side mode suppression ratio (SMSR), and single-longitudinal-mode tunable range of our device are 50.89 mW (at 20 °C), 34.56 dB, and 12.792 nm, respectively. The rate of change in wavelength with temperature of the laser is 0.401 nm/°C, which is equivalent to that of a Fabry-Perot (FP) laser and much better than that of a general DFB device. This device has a cavity the same as an FP laser without any etching gratings, meanwhile the lasing spectrum behaves a single longitudinal mode characteristic as a DFB laser.

中文翻译：

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具有宽可调范围的795 Nm的纯增益分布反馈布拉格半导体激光器

我们演示了基于i线光刻和表面周期电流注入技术的分布式反馈（DFB）半导体激光器，其激光波长为795 nm，与Rb的D1光谱相对应，并且在碱蒸汽激光器和原子激光器方面有许多应用时钟。我们器件的最大输出功率，侧模抑制比（SMSR）和单纵模可调范围分别为50.89 mW（在20°C时），34.56 dB和12.792 nm。波长随激光器温度的变化率为0.401 nm /°C，与法布里-珀罗（FP）激光器相当，远胜于普通DFB器件。该装置具有与FP激光器相同的腔体，没有任何刻蚀光栅，同时激光光谱表现出与DFB激光器相同的单一纵向模式特性。