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Subharmonic single-balanced LMV with bottom LO injection
Current Applied Physics ( IF 2.4 ) Pub Date : 2021-04-17 , DOI: 10.1016/j.cap.2021.04.010
Nam-Jin Oh

This paper proposes a subharmonic single-balanced RF receiver front-end (called LMV) where low noise amplifier is stacked on top of a differential voltage-controlled oscillator (VCO) to re-use the dc bias current. In this subharmonic (SH) LMV, the VCO itself plays the role of the single-balanced subharmonic mixer while generating an LO signal. This bottom LO SH LMV has good LO to IF and LO to RF leakage performances. Also, it can reduce the die size on a chip since it requires only one inductor for the VCO instead of two in the case of top LO LMV.

Oscillating at around 2.4 GHz band, the proposed SH LMV is designed using a 65 nm CMOS technology and compared to the top LO SH LMV in terms of phase noise, conversion gain and double sideband noise figure. The SH LMVs consume about 160 μW dc power from a 1-V supply.



中文翻译:

底部LO注入的亚谐波单平衡LMV

本文提出了一种亚谐波单平衡RF接收机前端(称为LMV),其中低噪声放大器堆叠在差分压控振荡器(VCO)的顶部,以重新使用直流偏置电流。在此次谐波(SH)LMV中,VCO本身在产生LO信号的同时扮演了单平衡次谐波混频器的角色。该底部LO SH LMV具有良好的LO至IF和LO至RF的泄漏性能。此外,由于它只需要一个电感器作为VCO,而在顶部LO LMV情况下则需要两个电感器,因此可以减小芯片上的芯片尺寸。

拟议的SH LMV在2.4 GHz频段附近振荡,采用65 nm CMOS技术设计,并且在相位噪声,转换增益和双边带噪声系数方面均与顶级LO SH LMV相比。SH LMV从1V电源消耗约160μW直流电源。

更新日期:2021-04-21
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