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Zinc Oxide Thin-Film Transistor with Catalytic Electrodes for Hydrogen Sensing at Room Temperature
IEEE Transactions on Nanotechnology ( IF 2.4 ) Pub Date : 2021-03-25 , DOI: 10.1109/tnano.2021.3068994
Sukanya Ghosh , Lintu Rajan

Palladium-Titanium (Pd-Ti)/n-ZnO Schottky contact based thin-film transistor (TFT) was fabricated on a thermally oxidized n-Si substrate with a compatible fabrication process and the hydrogen-sensing response was evaluated under room temperature (RT) without the presence of any heating element which reduces design complexity as well as power consumption significantly. Structural, mechanical, chemical and optical properties of the RF (Radio Frequency) sputtered ZnO thin film with 150 nm thickness as a gas sensing element have been investigated. Electrical characteristics and concentration dependent (500 ppm to 4500 ppm) RT sensor response (in the context of increasing drain current as the Schottky barrier height decreases) of the fabricated device with the maximum sensitivity of 70.8% (at 4500 ppm H 2 ) including a minimum response time of 20 s (at 4500 ppm H 2 ) and recovery time of 40 s (at 500 ppm H 2 ) have been demonstrated. Sufficiently impressive performance of the sensor has been observed with respect to repeatability, selectivity, time-depending stability and humidity analysis at RT.

中文翻译:

室温下带有催化电极的氧化锌薄膜晶体管,用于氢感测

钯钛(Pd-Ti)/ n-ZnO基于肖特基接触的薄膜晶体管(TFT)在热氧化的n-Si衬底上以兼容的制造工艺制造,并在室温(RT)下评估氢感测响应),而无需任何加热元件,从而大大降低了设计复杂度并降低了功耗。已经研究了厚度为150 nm的RF(射频)溅射ZnO薄膜作为气体传感元件的结构,机械,化学和光学特性。所制造器件的电气特性和浓度依赖性(500 ppm至4500 ppm)RT传感器响应(在漏极电流随着肖特基势垒高度降低而增加的情况下),最大灵敏度为70.8%(在4500 ppm H 2时) )包括20 s(在4500 ppm H 2时 )的最短响应时间 和40 s(在500 ppm H 2时 )的恢复时间 。在重复性,选择性,随时间变化的稳定性和RT下的湿度分析方面,已观察到该传感器的性能令人印象深刻。
更新日期:2021-04-16
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