We demonstrated modulation doping in diamond and fabricated diamond field-effect transistors (FETs) by NO₂ p-type delta doping in an Al₂O₃ gate layer. We confirmed modulation doping effects: a spatial separation between the NO₂ acceptors in the Al₂O₃ gate insulator and the hole channel on the diamond surface increased the hole mobility, and the high hole sheet concentration was maintained till high temperatures. The diamond FETs showed maximum drain current density of −627mAmm⁻¹, and transconductance of 131 mSmm⁻¹. The mobility increased to 2465 cm² V⁻¹ · s⁻¹ near the threshold voltage, and the Baliga’s figure-of-merit was 179MWcm⁻².

我们通过在 Al ₂ O ₃栅极层中的NO ₂ p 型 delta 掺杂证明了在金刚石和制造的金刚石场效应晶体管 (FET) 中的调制掺杂。我们证实了调制掺杂效应：Al ₂ O ₃栅极绝缘体中的 NO ₂受体与金刚石表面上的空穴通道之间的空间分离增加了空穴迁移率，并且保持高空穴片浓度直到高温。金刚石 FET 显示出 -627mAmm ^{-1 的}最大漏极电流密度和 131 mSmm ^{-1 的}跨导。迁移率增加到 2465 cm ² V ^-1 · s ^-1接近阈值电压，Baliga 的品质因数为 179MWcm ^-2。