Electron transport through a few-donor cluster flanked by acceptors is studied by first-principles and semi-empirical simulations in gated Si-nanowire transistors with n ⁺ electrostatically-doped source/drain. Local density-of-states spectra are probed by electrical characteristics at room temperature for clarifying modifications induced by acceptor-atoms on the energy states of the few-donor cluster. It is found that acceptor-atoms located between the few-donor cluster and the leads mainly shift the cluster potential, introducing a minor distortion to its energy spectrum. The results change only weakly as the acceptor-atoms are moved towards the Si nanowire surface, and systematically depend on the number of acceptors.

通过具有n ⁺静电掺杂源极/漏极的栅极硅纳米线晶体管中的第一性原理和半经验模拟，研究了电子通过侧接受主的少数供体簇的电子传输。通过室温下的电特性探测局部态密度光谱，以阐明由受体原子对少数供体簇的能态引起的修饰。发现位于少数供体簇和引线之间的受体原子主要改变簇电位，对其能谱产生轻微失真。当受主原子移向 Si 纳米线表面时，结果仅发生微弱的变化，并且系统地取决于受主的数量。