In this study, the modeling and experimental analysis of photovoltaic parameters of the GaInP/GaAs dual–junction (DJ) p–i–n solar cell structure were examined. The design of the GaInP/GaAs DJ p–i–n solar cell structure was done with the drift–diffusion model (DDM), and this structure was grown with the molecular beam epitaxy (MBE) system. The fundamental parameters (open–circuit voltage (\({V}_{\mathrm{OC}}\)), short–circuit current density (\({J}_{\mathrm{SC}}\)), fill factor (\(\mathrm{FF}\)), and energy conversion efficiency (\(\eta\))) of these structures were determined by both modeling and the current–voltage experimental measurements. All electrical output parameters of the GaInP/GaAs DJ p–i–n solar cells obtained from modeling and experimental were compared. An increase in solar cell efficiency was observed with the integration of the i–layer.

在这项研究中，对GaInP / GaAs双结（DJ）p–i–n太阳能电池结构的光伏参数进行了建模和实验分析。GaInP / GaAs DJ p–i–n太阳能电池结构的设计是通过漂移扩散模型（DDM）完成的，并且该结构是通过分子束外延（MBE）系统生长的。基本参数（开路电压（\（{V} _ {\ mathrm {OC}} \）），短路电流密度（\（{J} _ {\ mathrm {SC}} \}）），填充系数（\（\ mathrm {FF} \））和能量转换效率（\（\ eta \）））这些结构是通过建模和电流-电压实验测量确定的。比较了通过建模和实验获得的GaInP / GaAs DJ p–i–n太阳能电池的所有电输出参数。通过i层的集成，可以观察到太阳能电池效率的提高。