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Design and characterization of Schottky barrier double gate based p-IMOS
Indian Journal of Physics ( IF 2 ) Pub Date : 2021-04-16 , DOI: 10.1007/s12648-021-02083-4
Shahrzad Khajavi , Mohammad Azim Karami

In this paper, a Schottky barrier double gate impact ionization metal oxide semiconductor (SBDG-IMOS) transistor with reduced subthreshold swing (SS), gate threshold voltage (VGT), and operational voltage (VOp) is introduced. The proposed transistor benefits from approximately one order of magnitude ON current enhancement with ON/OFF current ratio of 1.3 × 107 verified by device simulations. Using of double gate structures and silicide type source results in higher electric field inside channel and intrinsic region which enhances the impact ionization rate in the intrinsic region. Hence, a gate threshold voltage of 1.27 V and steep current–voltage characteristics with SS of 1.9 mV/dec are achieved. According to parasitic resistance reduction in the source region due to the silicide usage in the source, the higher voltage difference between source and drain appears across the intrinsic region enhancing the electric field in intrinsic area so that the source-drain voltage which initiates the avalanche breakdown is reduced to 7.7 V.



中文翻译:

基于肖特基势垒双栅p-IMOS的设计与表征

本文介绍了一种具有降低的亚阈值摆幅(SS),栅极阈值电压(V GT)和工作电压(V Op)的肖特基势垒双栅极碰撞电离金属氧化物半导体(SBDG-IMOS)晶体管。所建议的晶体管受益于ON / OFF电流比为1.3×10 7的大约一个数量级的ON电流增强通过设备仿真验证。使用双栅极结构和硅化物类型的源会在沟道和本征区内部产生更高的电场,从而提高本征区中的碰撞电离率。因此,获得了1.27 V的栅极阈值电压和1.9 mV / dec的陡峭电流-电压特性。根据源极中使用硅化物导致源极区域中的寄生电阻降低,在本征区域上会出现源极和漏极之间的更高电压差,从而增强了本征区域中的电场,从而引发雪崩击穿的源极-漏极电压降至7.7 V

更新日期:2021-04-16
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