The wide band gap semiconducting perovskite $\mathrm{BaSn}{\mathrm{O}}_3$ is of high current interest due to outstanding room temperature mobility at high electron density, fueled by potential applications in oxide, transparent, and power electronics. Due in part to a lack of lattice-matched substrates, $\mathrm{BaSn}{\mathrm{O}}_3$ thin films suffer from high defect densities, however, limiting electron mobility. Additionally, the vast majority of $\mathrm{BaSn}{\mathrm{O}}_3$ thin film research has focused on pulsed laser deposition or molecular beam epitaxy. Here, we present an exhaustive optimization of the mobility of ${\mathrm{Ba}}_{0.98}{\mathrm{La}}_{0.02}\mathrm{Sn}{\mathrm{O}}_3$ films grown by a scalable, high-throughput method: high-pressure-oxygen sputter deposition. Considering target synthesis conditions, substrate selection, buffer layer structure, deposition temperature, deposition rate, thickness, and postdeposition annealing conditions, and by combining high-resolution x-ray diffraction, reciprocal space mapping, rocking curve analysis, scanning transmission electron microscopy, atomic force microscopy, and temperature-dependent electronic transport measurements, detailed understanding of synthesis-structure-property relationships is attained. Optimized room temperature mobility of $96\mathrm{c}{\mathrm{m}}^2{\mathrm{V}}^{\text{–}1}{\mathrm{s}}^{\text{–}1}$ is achieved in vacuum-annealed $\mathrm{GdSc}{\mathrm{O}}_3$(110)/$\mathrm{BaSn}{\mathrm{O}}_3$(120 nm)/${\mathrm{Ba}}_{0.98}{\mathrm{La}}_{0.02}\mathrm{Sn}{\mathrm{O}}_3$(200 nm) heterostructures, as well as $92\mathrm{c}{\mathrm{m}}^2{\mathrm{V}}^{\text{–}1}{\mathrm{s}}^{\text{–}1}$ on unbuffered substrates and $87\mathrm{c}{\mathrm{m}}^2{\mathrm{V}}^{\text{–}1}{\mathrm{s}}^{\text{–}1}$ without postdeposition annealing. These results, including important trends in defect densities and a surprising dependence of mobility on lattice mismatch, substantially expand the understanding of the interplay between deposition conditions, microstructure, and transport in doped $\mathrm{BaSn}{\mathrm{O}}_3$ films, establishing competitive mobilities in films fabricated via a scalable, high-throughput, industry-standard technique.

中文翻译：

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溅射La掺杂BaSnO3薄膜的结构-性质关系和迁移率优化：向100cm2V-1s-1迁移率

宽带隙半导体钙钛矿 $\mathrm{钡锡}{\mathrm{Ø}}_3$由于在高电子密度下具有出色的室温迁移率，并且由于在氧化物，透明和电力电子领域的潜在应用而加重了燃料电池的应用，因此人们对它具有很高的兴趣。部分由于缺少晶格匹配的基板，$\mathrm{钡锡}{\mathrm{Ø}}_3$薄膜具有高缺陷密度，但是限制了电子迁移率。此外，绝大多数$\mathrm{钡锡}{\mathrm{Ø}}_3$薄膜研究集中于脉冲激光沉积或分子束外延。在这里，我们提出了对移动性的彻底优化${巴}_{0.98}{\mathrm{啦啦}}_{0.02}锡{\mathrm{Ø}}_3$通过可扩展的高通量方法生长的薄膜：高压氧气溅射沉积。考虑目标合成条件，衬底选择，缓冲层结构，沉积温度，沉积速率，厚度和沉积后退火条件，并结合高分辨率x射线衍射，倒易空间映射，摇摆曲线分析，扫描透射电子显微镜，原子力显微镜和温度相关的电子传输测量，获得了对合成-结构-性质关系的详细了解。优化的室温迁移率$96\mathrm{C}{\mathrm{米}}^{\mathrm{2个}}{\mathrm{伏特}}^{\text{–}\mathrm{1个}}{\mathrm{s}}^{\text{–}\mathrm{1个}}$ 通过真空退火实现 $\mathrm{砷化镓}{\mathrm{Ø}}_3$（110）/$\mathrm{钡锡}{\mathrm{Ø}}_3$（120纳米）/${巴}_{0.98}{\mathrm{啦啦}}_{0.02}锡{\mathrm{Ø}}_3$（200 nm）异质结构，以及 $92\mathrm{C}{\mathrm{米}}^{\mathrm{2个}}{\mathrm{伏特}}^{\text{–}\mathrm{1个}}{\mathrm{s}}^{\text{–}\mathrm{1个}}$ 在无缓冲的底材上 $87\mathrm{C}{\mathrm{米}}^{\mathrm{2个}}{\mathrm{伏特}}^{\text{–}\mathrm{1个}}{\mathrm{s}}^{\text{–}\mathrm{1个}}$无需后沉积退火。这些结果，包括缺陷密度的重要趋势以及迁移率对晶格失配的出乎意料的依赖性，极大地扩展了对沉积条件，微观结构和掺杂中的传输之间相互作用的理解。$\mathrm{钡锡}{\mathrm{Ø}}_3$ 胶片，通过可扩展的高通量行业标准技术，在制作的胶片中建立竞争性。