The insulator-to-metal transition in Mott insulators is the key mechanism for most of the electronic devices belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control protocols, usually based on the application of voltage, strain, pressure, and light excitation. The ultimate goal is to achieve the complete control of the electronic phase transformation, with dramatic impact on the performance, for example, of resistive-switching devices. Here, we investigate the simultaneous effect of external voltage and excitation by ultrashort light pulses on a single Mottronic device based on a ${\mathrm{V}}_2{\mathrm{O}}_3$ epitaxial thin film. The experiments are supported by both finite-element simulations of the thermal problem and a simpler lumped-element model. The thermal models are benchmarked against results obtained at very low applied voltage ($\mathrm{\Delta }V=5$ mV). When the voltage is significantly increased ($\mathrm{\Delta }V=0.5$ V), but still in the linear below-switching-threshold region, our results show that the light excitation drives a volatile resistivity drop, which goes beyond the combined effect of laser and Joule heating. Our results impact on the development of protocols for the nonthermal control of the resistive-switching transition in correlated materials.

中文翻译：

---

基于V2O3的Mott绝缘子设备中的光辅助电阻崩溃

Mott绝缘子中的绝缘子到金属的过渡是属于Mottronics系列的大多数电子设备的关键机制。当前，大量的研究工作致力于特定控制协议的开发，通常基于电压，应变，压力和光激发的应用。最终目标是实现对电子相变的完全控制，并对例如电阻开关器件的性能产生重大影响。在这里，我们研究了外部电压和超短光脉冲对基于Mottronic的单个Mottronic设备的激励的同时影响。${\mathrm{伏特}}_{\mathrm{2个}}{\mathrm{Ø}}_3$外延薄膜。对热问题的有限元模拟和更简单的集总模型都支持了该实验。相对于在非常低的施加电压下获得的结果（$\mathrm{\Delta }\mathrm{伏特}=5$mV）。当电压显着升高时（$\mathrm{\Delta }\mathrm{伏特}=0.5$V），但仍处于线性开关阈值以下区域，我们的结果表明，光激发会引起挥发性电阻率下降，这超出了激光和焦耳加热的综合作用。我们的结果影响了相关材料中电阻转换的非热控制协议的开发。