Abstract

In this study we investigated the dependences of the rate of ion-beam etching of the upper contact layer (GaAs:Si), an active region consisting of a 50-fold alternation of barrier layers (Al_xGa_1–xAs) and quantum wells (GaAs:Si) and the lower contact layer (GaAs:Si) along the depth of QWIP structures based on GaAs–AlGaAs, fabricated by molecular beam epitaxy (MBE), in order to determine the effect of the composition of various layers on the etching rate and the ability to complete the etching process to the desired depth in time.

中文翻译：

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QWIP结构的离子刻蚀深度和速率的研究

摘要

在这项研究中，我们研究了上接触层（GaAs：Si）的离子束蚀刻速率的相关性，该接触区是由势垒层（Al _x Ga _{1- x} As）的50倍交替组成的活性区域分子束外延（MBE）制造的基于GaAs-AlGaAs的QWIP结构深度的阱（GaAs：Si）和下部接触层（GaAs：Si），以确定各个层的组成对刻蚀速率以及将刻蚀过程及时完成所需深度的能力。