This article presents a W‐band preamplified power detector (PD) monolithic microwave integrated circuit (MMIC). The chip consists of a pseudomorphic high electron mobility transistor (pHEMT) PD with a six‐stage low noise amplifier (LNA) in a commercial 0.1‐μm GaAs pHEMT technology. In order to reduce the high risk of oscillating in a multistage LNA, a circulator‐based method for LNA interstage stability simulation, along with the concept of loop gain, is introduced and analyzed. The simulated loop gain of each node of the LNA is calculated through the proposed method to ensure the unconditional stability for the six‐stage LNA. By incorporating the high gain LNA over 32 dB in the front‐end of the PD, the measured chip achieves a peak responsivity of 3.4 MV/W and a minimum noise equivalent power (NEP) of 95 fW/Hz^1/2 both at 85 GHz. To the best of the authors' knowledge, the proposed PD exhibits the best responsivity and NEP in published W‐band GaAs PD MMICs.

中文翻译：

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适用于无源成像应用的AW波段预放大MMIC功率检测器

本文介绍了一种W波段前置放大功率检测器（PD）单片微波集成电路（MMIC）。该芯片由采用0.1μmGaAs pHEMT商业技术的六态低噪声放大器（LNA）构成的伪形高电子迁移率晶体管（pHEMT）PD组成。为了降低多级LNA振荡的高风险，引入并分析了基于循环器的LNA级间稳定性仿真方法，以及环路增益的概念。通过所提出的方法来计算LNA每个节点的模拟环路增益，以确保六级LNA的无条件稳定性。通过在PD前端集成超过32 dB的高增益LNA，被测芯片可实现3.4 MV / W的峰值响应度和95 fW / Hz ^1/2的最小噪声等效功率（NEP）两者都在85 GHz。据作者所知，建议的PD在已发布的W波段GaAs PD MMIC中表现出最佳的响应度和NEP。