Visible-Light Communication (VLC) application such as traffic lighting requires high-speed data transmission wherein at the receiving end, a fast response and wide bandwidth photodetector should decode the sent data. High-speed detection is achievable through a photoFET such as Optical Field Effect Transistor (OPFET) while maintaining tremendously large photocurrent gain or sensitivity. In this paper, we investigate the switching and frequency responses of GaAs OPFET models (buried-gate front-illuminated, and generalized, models) with Indium-Tin-Oxide (ITO) gate. These responses have been contrasted to that with gold (Au) gate investigated in the previous work showing a considerable enhancement in the 3-dB bandwidth and an almost constant switching/amplification response. The effect of structural parameters on the switching and frequency responses of the buried-gate models has been studied. The switching parameters and the bandwidth-dependence upon the optical power have been analyzed. The attained responses suggest that the devices will serve good purpose in high-speed applications.

可见光通信（VLC）应用（例如交通照明）需要高速数据传输，其中在接收端，快速响应和宽带光电探测器应解码发送的数据。通过光场效应晶体管（OPFET）之类的photoFET可以实现高速检测，同时保持极大的光电流增益或灵敏度。在本文中，我们研究了具有铟锡氧化物（ITO）栅极的GaAs OPFET模型（埋入栅前照式和广义模型）的开关和频率响应。这些响应与先前工作中研究的金（Au）门形成了对比，显示了3 dB带宽的显着增强和几乎恒定的开关/放大响应。研究了结构参数对掩埋栅模型的开关和频率响应的影响。分析了切换参数和带宽对光功率的依赖性。所获得的答复表明，该器件将在高速应用中发挥良好的作用。