Here, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >10⁶ s at 100 °C under a continuous DC stress of 3 MA cm⁻². Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).

在这里，我们演示了通过在具有增强性能的Cu互连上直接合成石墨烯来制造Cu-石墨烯异质结构互连。在400°C下使用液态苯或吡啶源通过大气压化学气相沉积（APCVD）在Cu互连图案上合成多层石墨烯薄膜。与纯Cu互连相比，石墨烯封盖的Cu互连表现出更低的电阻率，更高的击穿电流密度和更高的可靠性。另外，通过掺杂而大大提高了石墨烯的载流子密度，从而 在3 MA cm ^-2的连续直流应力下于100°C的平均失效时间> 10 ⁶ s的情况下，大大提高了石墨烯覆盖的互连的可靠性。。此外，石墨烯封端的铜异质结构即使是镶嵌图案的结构也表现出增强的电性能和可靠性，这表明与诸如CMOS后端（BEOL）中的下一代互连材料之类的实际应用兼容。