ABSTRACT

Perpendicular Magnetic Anisotropy-based Magnetic Tunnel Junction (PMA-MTJ) and Spin Transfer Torque Magnetic Random-Access Memory (STT-MRAM) have attracted wide attention among the next-generation Non-Volatile Memory (NVM) technologies due to low leakage and high-density characteristics for embedded memory architectures. However, STT-MRAM-based memory cells are not energy efficient with CMOS scaling at scaled supply voltages. This paper presents a novel energy-efficient Hybrid TFET (1 T: Hetero-junction TFET, 1 T: Homo-junction TFET)/STT-MRAM cell that explores p-i-n forward current of Tunnel FET. The proposed hybrid memory cell demonstrates ~27.3% energy efficiency over equivalent 1 T FinFET/STT-MRAM cell, 16.75% energy efficiency over equivalent 1 T Homo-junction TFET/STT-MRAM cell and 24.3% energy efficiency over equivalent 1 T Hetero-junction TFET/STT-MRAM cell at V_DD = 0.5 V.

摘要

基于垂直磁各向异性的磁隧道结 (PMA-MTJ) 和自旋转移力矩磁随机存取存储器 (STT-MRAM) 由于低泄漏和高容量而在下一代非易失性存储器 (NVM) 技术中引起广泛关注。 -嵌入式存储器架构的密度特性。然而，基于 STT-MRAM 的存储单元在 CMOS 缩放的电源电压下不具有能量效率。本文介绍了一种新型节能混合 TFET（1 T：异质结 TFET，1 T：同质结 TFET）/STT-MRAM 单元，用于探索隧道 FET 的引脚正向电流。所提出的混合存储单元与等效的 1 T FinFET/STT-MRAM 单元相比具有约 27.3% 的能量效率，与等效的 1 T 同质结 TFET/STT-MRAM 单元和 24 相比具有 16.75% 的能量效率。_DD  = 0.5 V。