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Ammonia gas sensors using 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile semiconductor films
Synthetic Metals ( IF 4.4 ) Pub Date : 2021-04-09 , DOI: 10.1016/j.synthmet.2021.116764
Aleksei A. Parfenov , Alexander V. Mumyatov , Diana K. Sagdullina , Alexander F. Shestakov , Pavel A. Troshin

1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile HAT(CN)6 represents a promising semiconductor material for organic electronic applications ranging from field-effect transistors to magnetic switches and solar cells. Herein, we report for the first time the application of HAT(CN)6 for designing OFET-based gas sensors. The organic field-effect transistors based on HAT(CN)6 showed a decent charge carrier mobility of 10−4 cm2 V−1s−1 coupled with high sensitivity and fast response to low concentrations of ammonia. Quantum chemical DFT calculations were applied to investigate supramolecular interactions of HAT(CN)6 with ammonia and reveal the origin of the observed sensing effect.



中文翻译:

使用1,4,5,8,9,11-六氮杂三亚苯基六甲腈半导体膜的氨气传感器

1,4,5,8,9,11-六氮杂三苯并六甲腈HAT(CN)6代表了一种有前途的半导体材料,用于有机电子应用,范围从场效应晶体管到磁性开关和太阳能电池。在此,我们首次报告HAT(CN)6在设计基于OFET的气体传感器中的应用。基于HAT(CN)6的有机场效应晶体管显示出10 -4 cm 2 V -1 s -1的体面的载流子迁移率,并具有高灵敏度和对低浓度氨的快速响应。应用量子化学DFT计算研究HAT(CN)6的超分子相互作用 与氨并揭示观察到的感应效果的起源。

更新日期:2021-04-09
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