In this work, we designed and fabricated a dual-mode switch based on triple-waveguide couplers and two thermal phase shifters, and demonstrated the first silicon-integrated mode division multiplexing (MDM) switching network for $2-\mu \text{m}$ waveband. The proposed dual-mode switch shows < 2.6 dB insertion loss, <−20 dB inter-mode crosstalk at 1960 nm, with broadband operation over 100 nm. The experimental results of dynamic switching at 10 kHz presents 9.2- $\mu \text{s}$ rising time and $13.2-\mu \text{s}$ falling time, with switching power of 19.2 mW. High speed on-chip MDM routing of $2\times 60$ Gbps signal was experimentally demonstrated using the proposed 2- $\mu \text{m}$ MDM switching network, drawing the promising prospect for the future photonic integration and high-speed MDM networking at 2- $\mu \text{m}$ waveband.

中文翻译：

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用于2μm波长高速光学互连的片上选择性双模开关

在这项工作中，我们设计和制造了一个基于三波导耦合器和两个热移相器的双模式开关，并演示了第一个用于集成硅的模式集成多路复用（MDM）开关网络。 $ 2- \ mu \ text {m} $ 波段。拟议中的双模开关在1960 nm处表现出<2.6 dB的插入损耗，<-20 dB的模间串扰，宽带工作在100 nm以上。10 kHz动态切换的实验结果为9.2- $ \ mu \ text {s} $ 上升时间和 $ 13.2- \ mu \ text {s} $ 下降时间，开关功率为19.2 mW。的高速片上MDM路由 2美元/次60美元 Gbps信号通过使用建议的2-进行了实验验证 $ \ mu \ text {m} $ MDM交换网络，为未来的光子集成和2层高速MDM网络绘制了广阔的前景 $ \ mu \ text {m} $ 波段。