The advent of the Internet-of-Things brings new challenges in circuit design. The presence of circuits and sensors in harsh environments brought the need for methodologies that account for them. Since the beginning of the transistors, the temperature is known for having a significant impact on performance, and even though very low temperature sensitivity circuits have been proposed, no general methodology for designing them exists. This paper proposes a gm over Id technique for designing temperature-aware circuits that can be used either on measurement data, analytically, or based on simulation models. This model is validated using measurements up to 200°C of X-FAB XT018 transistors and later with a circuit design example.

中文翻译：

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一个基于温度的框架 克·_米/我_d-40°C至200°C的180 nm SOI的基于方法

物联网的出现给电路设计带来了新的挑战。恶劣环境中电路和传感器的出现带来了对解决这些问题的方法学的需求。自从晶体管问世以来，温度就一直对性能产生重大影响，因此，尽管已经提出了非常低的温度敏感度电路，但尚无用于设计它们的通用方法。本文提出了一种基于Id的gm技术，用于设计温度感知电路，该电路可用于测量数据，分析或基于仿真模型。使用高达200°C的X-FAB XT018晶体管进行测量并随后通过电路设计实例验证了该模型。