Modeling the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN high electron mobility transistors (HEMTs) improves model accuracy. In this letter, extraction results indicate that the current modeling methods cannot accurately reflect the variations of nonlinearity in intrinsic capacitances with temperature. This letter analyzes the causes of unmodeled phenomena and characterizes them based on device physics. Verifications show that the improved intrinsic capacitance model in this letter effectively enhances the accuracy of the HEMT model at non-nominal temperatures.

中文翻译：

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AlGaN / GaN HEMT中固有电容随温度变化的非线性分析和建模

对AlGaN / GaN高电子迁移率晶体管（HEMT）中固有电容的温度相关非线性进行建模可以提高模型精度。在这封信中，提取结果表明，当前的建模方法无法准确反映本征电容随温度的非线性变化。这封信分析了未建模现象的原因，并根据设备物理学对其进行了表征。验证表明，本文改进的固有电容模型有效地提高了非标称温度下HEMT模型的精度。