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A Ka-Band Switchable LNA With 2.4-dB NF Employing a Varactor-Based Tunable Network
IEEE Microwave and Wireless Components Letters ( IF 3 ) Pub Date : 2021-02-16 , DOI: 10.1109/lmwc.2021.3059655
Zuojun Wang 1 , Debin Hou 1 , Peigen Zhou 1 , Huanbo Li 1 , Zekun Li 1 , Jixin Chen 1 , Wei Hong 1
Affiliation  

This letter presents a multiband switchable low-noise amplifier (LNA) in the 0.1- $\mu \text{m}$ GaAs pHEMT process. Employing a new varactor-based tunable network as the interstage matching circuit, the operation bands can be tuned consecutively and cover the 5G millimeter-wave frequency bands N257/N260. The proposed tunable structure functions well without sacrificing noise performance or increasing dc consumption and chip area. In the entire operation band from 26.5 to 41 GHz, the LNA achieves a small-signal gain of over 24 dB and a noise figure (NF) of less than 2.9 dB. The measured result shows a small-signal gain of 25.1 dB/27.7 dB and an NF of 2.4 dB/2.8 dB at 28 GHz/39 GHz. The measured input 1-dB compression point (IP 1dB ) is −18.3 dBm/−17 dBm at 28 GHz/39 GHz. The measured input-referred intercept point (IIP 3 ) is −8.8 dBm/−8.5 dBm at 28 GHz/39 GHz. The LNA has a chip size of 1.6 mm $\times 1$ mm, and the total power consumption is 74 mW. To the best of our knowledge, the proposed LNA is the state-of-the-art Ka -band switchable LNA and has similar performance compared with single-band LNAs using the same technology.

中文翻译:

一种 K a具有基于变容二极管的可调网络的2.4dB NF频段可切换LNA

这封信提出了0.1- $ \ mu \ text {m} $ GaAs pHEMT工艺。采用新的基于变容二极管的可调谐网络作为级间匹配电路,可以连续调谐工作频带并覆盖5G毫米波频带N257 / N260。所提出的可调结构在不牺牲噪声性能或不增加直流功耗和芯片面积的情况下很好地起作用。在26.5至41 GHz的整个工作频带中,LNA的小信号增益均超过24 dB,而噪声系数(NF)则低于2.9 dB。测量结果显示,在28 GHz / 39 GHz时,小信号增益为25.1 dB / 27.7 dB,NF为2.4 dB / 2.8 dB。 在28 GHz / 39 GHz处测得的输入1 dB压缩点(IP 1dB)为-18.3 dBm / −17 dBm。测得的输入参考截点(IIP 3 )在28 GHz / 39 GHz时为-8.8 dBm / -8.5 dBm。LNA的芯片尺寸为1.6毫米 $ \次1 $ 毫米,总功耗为74毫瓦。据我们所知,拟议的LNA是最先进的K a 频段可切换LNA,并且与使用相同技术的单频段LNA相比,具有相似的性能。
更新日期:2021-04-09
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