We investigated temperature dependent current driven spin-orbit torques in magnetron sputtered ${\mathrm{Ru}}_2{\mathrm{Sn}}_3$ (4 and 10 nm)/${\mathrm{Co}}_{20}{\mathrm{Fe}}_{60}{\mathrm{B}}_{20}$ (5 nm) layered structures with in-plane magnetic anisotropy. The room temperature dampinglike and fieldlike spin torque efficiencies of the amorphous ${\mathrm{Ru}}_2{\mathrm{Sn}}_3$ films were measured to be $0.14\pm 0.008\left(0.07\pm 0.012\right)$ and $–0.03\pm 0.006\left(–0.20\pm 0.009\right)$, for the four (10 nm) films, respectively, by utilizing the second-harmonic Hall technique. The large fieldlike torque in the relatively thicker ${\mathrm{Ru}}_2{\mathrm{Sn}}_3$ (10 nm) thin film is unique compared to the traditional spin Hall materials interfaced with thick magnetic layers with in-plane magnetic anisotropy which typically have dominant dampinglike and negligible fieldlike torques. Additionally, the observed room temperature fieldlike torque efficiency in ${\mathrm{Ru}}_2{\mathrm{Sn}}_3$ (10 nm)/CoFeB (5 nm) is up to three times larger than the dampinglike torque ($–0.20\pm 0.009$ and $0.07\pm 0.012$, respectively) and 30 times larger at 50 K ($–0.29\pm 0.014$ and $0.009\pm 0.017$, respectively). The temperature dependence of the fieldlike torques shows dominant contributions from the intrinsic spin Hall effect while the dampinglike torques show dominate contributions from the extrinsic spin Hall effects, skew scattering, and side jump. Through macrospin calculations, we found that including fieldlike torques on the order of or larger than the dampinglike torque can reduce the switching critical current and decrease magnetization procession for a perpendicular ferromagnetic layer.

中文翻译：

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源于本征自旋霍尔效应的非晶态Ru2Sn3的大场似转矩

我们研究了磁控溅射中温度相关的电流驱动自旋轨道转矩 ${茹}_{\mathrm{2个}}{锡}_3$ （4和10海里）/${\mathrm{有限公司}}_{20}{铁}_{60}{\mathrm{乙}}_{20}$（5 nm）具有面内磁各向异性的分层结构。非晶态合金的室温阻尼和场效应自旋扭矩效率${茹}_{\mathrm{2个}}{锡}_3$ 胶片被测量为 $0.14\pm 0.008（0.07\pm 0.012）$ 和 $–0.03\pm 0.006（–0.20\pm 0.009）$通过使用二次谐波霍尔技术，分别针对四张（10 nm）薄膜，。相对较厚的大场转矩${茹}_{\mathrm{2个}}{锡}_3$（10 nm）薄膜与传统的自旋霍耳材料相比较，传统材料与具有面内磁各向异性的厚磁性层相交界，这些磁性层通常具有显着的阻尼性和可忽略的像场一样的转矩。此外，在${茹}_{\mathrm{2个}}{锡}_3$ （10 nm）/ CoFeB（5 nm）最多比类似阻尼的扭矩（$–0.20\pm 0.009$ 和 $0.07\pm 0.012$分别）和在50 K时大30倍（$–0.29\pm 0.014$ 和 $0.009\pm 0.017$， 分别）。像场转矩的温度依赖性显示出固有的自旋霍尔效应的主要贡献，而像阻尼一样的转矩显示出非本征自旋霍尔效应，偏斜散射和侧跳的主要贡献。通过宏自旋计算，我们发现，将类似场的转矩包括在等于或大于类似阻尼的转矩的范围内，可以减小开关临界电流并减小垂直铁磁层的磁化过程。